DIODE AVALANCHE 200V 3A SOD64
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.5 V @ 9 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 100 ns |
Current - Reverse Leakage @ Vr: | 1 µA @ 200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | SOD-64, Axial |
Supplier Device Package: | SOD-64 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-30WQ06FNTRR-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY DPAK |
|
HER202G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO204AC |
|
2A06G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 2A DO204AC |
|
SF14G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO204AL |
|
MR821Diotec Semiconductor |
DIODE FR D8X7.5 100V 5A |
|
CD214A-B240RJ.W. Miller / Bourns |
DIO SBD VRRM 40V 2A SMA |
|
STTH30RQ06WSTMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
|
HSM890J/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 90V 8A DO214AB |
|
B550C-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 50V 5A SMC |
|
MUR180EGSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 800V 1A AXIAL |
|
MSS1P5-M3/89AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 1A MICROSMP |
|
RGL41BHE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
|
STTH12S06FPSTMicroelectronics |
DIODE GEN PURP 600V 12A TO220FP |