SCHOTTKY SMC 150V 8A
SMA-RJB/FKRAZ-SP G316 24I
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 150 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 870 mV @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 200 µA @ 150 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | SMC (DO-214AB) |
Operating Temperature - Junction: | -50°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SBR3U60P5-13DZetex Semiconductors (Diodes Inc.) |
DIODE SBR 60V 3A PDI5 |
|
SF25G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 2A DO204AC |
|
RB168MM100TFTRROHM Semiconductor |
RB168MM100TF IS THE HIGH RELIABI |
|
NSR1020MW2T1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 20V 1A SOD323 |
|
1N5062GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AC |
|
1N5402G-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 200V 3A DO201AD |
|
ES1B-F1-0000HF |
DIODE GEN PURP 100V 1A DO214AC |
|
HER306G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO201AD |
|
1N5395GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1.5A DO204AC |
|
UPR5E3/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 2.5A DO216 |
|
ES1LDHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AC |
|
DSEI120-06AWickmann / Littelfuse |
DIODE GEN PURP 600V 77A TO247AD |
|
V10P15-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 10A TO277A |