SIC DIODE 650V
Type | Description |
---|---|
Series: | * |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 20A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 20 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 40 µA @ 650 V |
Capacitance @ Vr, F: | 866pF @ 1V, 100kHz |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 Variant |
Supplier Device Package: | TO-247-3 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UPS5817E3/TR7Roving Networks / Microchip Technology |
DIODE SCHOTTKY 20V 1A POWERMITE1 |
|
US1AHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO214AC |
|
1N5418C.TRSemtech |
DIODE GEN PURP 400V 4.5A AXIAL |
|
1N4933-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 50V 1A DO41 |
|
FFPF20UP20STURochester Electronics |
RECTIFIER DIODE |
|
SK36A M2GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 3A DO214AC |
|
BA159GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
|
UPR30E3/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 300V 2A POWERMITE |
|
VF30100SG-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30A 100V ITO220AB |
|
SK55B R5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 5A DO214AA |
|
VS-6EWH06FNTRHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A D-PAK |
|
RF071L4STE25ROHM Semiconductor |
DIODE GEN PURP 400V 1A PMDS |
|
VS-SD1100C16CVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 1400A B-43 |