DIODE SCHOTTKY 650V 20A TO220AC
Type | Description |
---|---|
Series: | ECOPACK®2 |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 1.45 V @ 20 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 300 µA @ 650 V |
Capacitance @ Vr, F: | 1250pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Insulated, TO-220AC |
Supplier Device Package: | TO-220AC ins |
Operating Temperature - Junction: | -40°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
D1721NH90TAOSA1IR (Infineon Technologies) |
DIODE GEN PURP D12026K-1 |
|
FESF16JTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 16A ITO220AC |
|
SBS010M-TL-ERochester Electronics |
SCHOTTKY BARRIER RECTIFIER DIODE |
|
BYW27-800Diotec Semiconductor |
DIODE STD DO-41 800V 1A |
|
GS1JSURGE |
1A -600V - SMA (DO-214AC) - RECT |
|
US1AHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A DO214AC |
|
MUR4L40HB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 4A DO201AD |
|
EFM204-WRectron USA |
DIODE SUPER FAST 200V 2A SMB |
|
1N4936G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO204AL |
|
UGF12JD C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 12A ITO220AC |
|
NSR01F30NXT5GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 100MA 2DSN |
|
UG8DT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO220AC |
|
S1AHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO214AC |