BAS16 - RECTIFIER DIODE, 2 ELEME
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 80 V |
Current - Average Rectified (Io): | 250mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.25 V @ 150 mA |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 4 ns |
Current - Reverse Leakage @ Vr: | 1 µA @ 75 V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Operating Temperature - Junction: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SS12P2L-M3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 12A TO277A |
|
SS24LWHRVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 2A SOD123W |
|
VS-16FR20MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 16A DO203AA |
|
TSP10U120S S1GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 120V 10A TO277A |
|
FESB16FT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 16A TO263AB |
|
1N5623GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO204AC |
|
1N4148 A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 150MA DO35 |
|
BYV29-500,127WeEn Semiconductors Co., Ltd |
DIODE GEN PURP 500V 9A TO220AC |
|
HSM580J/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 80V 5A DO214AB |
|
SS115 R3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 1A DO214AC |
|
BAS170WS-E3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 70V 70MA SOD323 |
|
BAS16WE6327Rochester Electronics |
RECTIFIER DIODE, 0.25A, 80V |
|
RMPG06J-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A MPG06 |