3.2X2.5 GLASS SEAL MHZ QUARTZ XT
SIC DIODE 650V
GRAPHENE ENHANCED EPOXY RESIN
SBD SERIES 0.07A 30V
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 10 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 40 µA @ 650 V |
Capacitance @ Vr, F: | 421pF @ 1V, 100kHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
HS2MA M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1.5A DO214AC |
![]() |
SM5402-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
![]() |
FM1800WRectron USA |
DIODE GEN PURP 1800V 500MA SMX |
![]() |
ES1BE-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 100V 1A DO214AC |
![]() |
VS-SD300C12CVishay General Semiconductor – Diodes Division |
DIODE GP 1.2KV 650A DO200AA |
![]() |
STB10100TRSMC Diode Solutions |
DIODE SCHOTTKY 100V D2PAK |
![]() |
SK23A M2GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 2A DO214AC |
![]() |
VS-ETU1506STRRHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO263 |
![]() |
VS-16F120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 16A DO203AA |
![]() |
VS-HFA04TB60SL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 4A D2PAK |
![]() |
RB521S-30TE61ROHM Semiconductor |
DIODE SCHOTTKY 30V 200MA EMD2 |
![]() |
RGL41D-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
![]() |
1N34ANTE Electronics, Inc. |
D-GE- 75PRV .005A |