DIODE AVALANCHE 200V 2.4A TO277A
Type | Description |
---|---|
Series: | eSMP® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 2.4A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 962 mV @ 2 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.8 µs |
Current - Reverse Leakage @ Vr: | 10 µA @ 200 V |
Capacitance @ Vr, F: | 60pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
LSIC2SD120E40CCWickmann / Littelfuse |
SCHOTTKY DIODE SIC 1200V 40A |
|
SF67G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 6A DO201AD |
|
CDBJFSC5650-GComchip Technology |
DIODE, SIC STKY 5A 650V TO-220F |
|
1N4150UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 200MA DO213AA |
|
SBX2540-3GDiotec Semiconductor |
SCHOTTKY D5.4X7.5_LOWRTH 40V 25A |
|
BYW56-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1000V 2A SOD57 |
|
1N5627-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 3A SOD64 |
|
UGB8BTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A TO263AB |
|
BYV29F-300HE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 8A ITO220AC |
|
VS-71HF40Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 70A DO203AB |
|
RS1GHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO214AC |
|
SSL24 M4GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 2A DO214AA |
|
FMB-G24HSanken Electric Co., Ltd. |
DIODE SCHOTTKY 40V 10A TO220F-2L |