MEMS OSC XO 24.0000MHZ LVCMOS LV
MOSFET N-CH 650V 8.5A POWERFLAT
DIODE GEN PURP REV 600V 85A DO5
MILDTL 38999 III JAM NUT
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 85A |
Voltage - Forward (Vf) (Max) @ If: | 1.4 V @ 85 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 500 ns |
Current - Reverse Leakage @ Vr: | 25 µA @ 100 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Operating Temperature - Junction: | -40°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
VS-307URA250P4Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2.5KV 300A DO9 |
![]() |
MBR1240MFST1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 40V 12A 5DFN |
![]() |
MURS160HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
![]() |
ACGRTS4005-HFComchip Technology |
DIODE GEN PURP 600V 1A TS/SOD-12 |
![]() |
CBS05F30,L3FToshiba Electronic Devices and Storage Corporation |
X34 PB-F CST2B SBD DIODE VR:30V, |
![]() |
BYC15X-600PQWeEn Semiconductors Co., Ltd |
DIODE GEN PURP 600V 15A TO220F |
![]() |
ES2JA R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 2A DO214AC |
![]() |
SF2L8GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 2A DO204AC |
![]() |
VS-10ETF02STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 10A D2PAK |
![]() |
STPSC10H065G-TRSTMicroelectronics |
DIODE SILICON 650V 10A D2PAK |
![]() |
VS-T110HF20Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 110A D-55 |
![]() |
AES1K-HFComchip Technology |
AUTOMOTIVE RECTIFIER SUPER FAST |
![]() |
SK33A M2GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 3A DO214AC |