DIODE GEN PURP 600V 2A DO15
Type | Description |
---|---|
Series: | - |
Package: | Cut Tape (CT)Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AC, DO-15, Axial |
Supplier Device Package: | DO-15 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
S1K-M3/61TVishay General Semiconductor – Diodes Division |
DIODE GPP 1A 800V DO-214AC |
|
JANTX1N6638URoving Networks / Microchip Technology |
DIODE GEN PURP 125V 300MA B-MELF |
|
RN 4ASanken Electric Co., Ltd. |
DIODE GEN PURP 600V 3A AXIAL |
|
SD101BWS-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 50V SOD323 |
|
SD101C-TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 30MA DO35 |
|
FESB16DTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 16A TO263AB |
|
VS-8ETH06STRRHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263 |
|
IDP30E65D1XKSA1IR (Infineon Technologies) |
DIODE GP 650V 60A TO220-2-1 |
|
GP3D010A120ASemiQ |
SIC SCHOTTKY DIODE 1200V TO220 |
|
FERD40H100SG-TRSTMicroelectronics |
DIODE RECT 100V 40A D2PAK |
|
VS-EPU6006L-N3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 60A TO247AD |
|
IDT08S60CRochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
STPS5L60SYSTMicroelectronics |
DIODE SCHOTTKY 60V 5A SMC |