DIODE GEN PURP 400V 2A DO214AA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 2A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.15 V @ 2 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2 µs |
Current - Reverse Leakage @ Vr: | 1 µA @ 400 V |
Capacitance @ Vr, F: | 16pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BAS70 RFGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 70V 70MA SOT-23 |
|
BYG10M-E3/TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 1.5A |
|
STTH1512PISTMicroelectronics |
DIODE GEN PURP 1.2KV 15A DOP3I |
|
PMEG120G30ELPXNexperia |
PMEG120G30ELP/SOD128/FLATPOWER |
|
CDBM1100-GComchip Technology |
DIODE SCHOTTKY 100V 1A MINISMA |
|
MBR16100HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 16A TO220AC |
|
1N4938UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 175V 100MA DO213 |
|
EM513-AQDiotec Semiconductor |
DIODE STD DO-41 1600V 1A |
|
NTE5821NTE Electronics, Inc. |
R-400 PRV 12A ANODE CASE |
|
CMR1-04M BK PBFREECentral Semiconductor |
DIODE GEN PURP 400V 1A SMA |
|
V35PWM45-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 35A SLIMDPAK |
|
BYWB29-150HE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 8A TO263AB |
|
1N5809USRoving Networks / Microchip Technology |
DIODE GEN PURP 100V 3A B-MELF |