DIODE SCHOTTKY 100V 2A SMB
MICROPHONE MEMS DIGITAL PDM OMNI
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 850 mV @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 500 µA @ 100 V |
Capacitance @ Vr, F: | 120pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-30EPF10-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 30A TO247AC |
|
FESB8CT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 8A TO263AB |
|
1N4148TASanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
|
BAT46W-E3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 150MA SOD123 |
|
BY133-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
VS-ETH3006-1-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 30A TO262 |
|
SB2D-M3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
|
SB160E-GComchip Technology |
DIODE SCHOTTKY 60V 1A DO41 |
|
MBRB1090-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 10A TO263AB |
|
VS-85HFR100Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 85A DO203AB |
|
UF4004-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
SB05-05P-TD-ERochester Electronics |
SCHOTTKY BARRIER DIODE, 50V, 0.5 |
|
VS-70HFL100S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 70A DO203AB |