THERMAL INTERFACE MATERIAL, SF50
DIODE SCHOTTKY 30V 200MA SOD123
DIODE GEN PURP 200V 1A DO214AA
THERM PAD 19.05MMX10.41MM W/ADH
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950 mV @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
STPS130AFNSTMicroelectronics |
30 V, 1 A POWER SCHOTTKY RECTIFI |
![]() |
SRL1G-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
![]() |
RS1A-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO214AC |
![]() |
S1B-E3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
![]() |
VS-6ESH06-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A TO277A |
![]() |
SE20DG-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3.9A TO263AC |
![]() |
VIT760-E3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 7.5A 60V TO-262AA |
![]() |
CMR1U-01 BK PBFREECentral Semiconductor |
DIODE GEN PURP 100V 1A SMB |
![]() |
ES3F V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 3A DO214AB |
![]() |
CMR5H-06 TR13 PBFREECentral Semiconductor |
DIODE GEN PURP 600V 5A SMC |
![]() |
FR2M-LTPMicro Commercial Components (MCC) |
2A,1000V,FAST RECOVERY RECTIFIER |
![]() |
CMSH3-60 BK PBFREECentral Semiconductor |
DIODE SCHOTTKY 60V 3A SMC |
![]() |
JANTX1N5621USRoving Networks / Microchip Technology |
DIODE GEN PURP 800V 1A D5A |