DIODE GEN PURP 200V 4A DPAK
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 4 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 100 µA @ 200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SB2100TASMC Diode Solutions |
DIODE SCHOTTKY 100V DO15 |
|
LL4448R13DComponents |
DIODE GEN PURP 75V 150MA SOD80C |
|
UF4004GTASMC Diode Solutions |
RECOVERY RECTIFIERS 400V DO-41 |
|
RBR5LAM60ATFTRROHM Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
|
SS2P6-M3/85AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 2A DO220AA |
|
IDK08G65C5XTMA2IR (Infineon Technologies) |
DIODE SCHOTTKY 650V 8A TO263-2 |
|
NRVTSAF260ET3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 60V 2A SMA-FL |
|
UF1JLWHRVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SOD123W |
|
BYP25A3Diotec Semiconductor |
DIODE STD D13X10.7W 300V 25A |
|
ES3HBHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 3A DO214AA |
|
1N4005E-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
SF2L4GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO204AC |
|
PMEG3010CEJ,115Nexperia |
DIODE SCHOTTKY 30V 1A SOD323F |