DIODE GEN PURP 100V 16A TO263AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 16A |
Voltage - Forward (Vf) (Max) @ If: | 975 mV @ 16 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 100 V |
Capacitance @ Vr, F: | 175pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-15ETL06FP-N3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO220FP |
|
AS1PD-M3/84AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A DO220 |
|
SBT1845-3GDiotec Semiconductor |
SCHOTTKY TO-220AC 45V 18A |
|
NTE5855NTE Electronics, Inc. |
R-200PRV 6A ANODE CASE |
|
ES2A-E3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 2A DO214AA |
|
AS3PJHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 2.1A TO277A |
|
2A05GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 2A DO204AC |
|
USD245CRHR2Roving Networks / Microchip Technology |
RECTIFIER |
|
NRVBB1060T4GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 60V 10A D2PAK |
|
STD5100TRSMC Diode Solutions |
DIODE SCHOTTKY 100V DPAK |
|
ESJLW RQGTSC (Taiwan Semiconductor) |
DIODE, SUPER FAST |
|
RB168MM-30TRROHM Semiconductor |
RB168MM-30 IS SUPER LOW IR |
|
SR106 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 1A DO204AL |