SUPER FAST RECOVERY DIODE FOR GE
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 450 V |
Current - Average Rectified (Io): | 100mA |
Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 100 mA |
Speed: | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 450 V |
Capacitance @ Vr, F: | 1.5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523 |
Supplier Device Package: | EMD2 |
Operating Temperature - Junction: | 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
B5818WS-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 30V 1A SOD323 |
|
SDURD1060TRSMC Diode Solutions |
DIODE GEN PURP 600V DPAK |
|
FFSB0665B-F085Sanyo Semiconductor/ON Semiconductor |
650V 6A SIC SBD GEN1.5 |
|
CMHD4150 TRCentral Semiconductor |
DIODE GEN PURP 50V 250MA SOD123 |
|
SS1FH10HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 1A DO-219AB |
|
IDD08SG60CXTMA1Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 1 PHA |
|
US1K-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO214AC |
|
FFSB1065BSanyo Semiconductor/ON Semiconductor |
650V 10A SIC SBD GEN1.5 |
|
SBRT6U45LP-7Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 45V 6A U-DFN3030-8 |
|
VS-T110HF100Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 110A D-55 |
|
UF1M R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1A DO204AL |
|
S1DBHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AA |
|
MMBD1401ARochester Electronics |
RECTIFIER DIODE, 0.2A, 175V |