DIODE AVALANCHE 800V 1A SOD57
Type | Description |
---|---|
Series: | - |
Package: | Cut Tape (CT)Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 2.5 V @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 800 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | SOD-57, Axial |
Supplier Device Package: | SOD-57 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DPG60IM400QBWickmann / Littelfuse |
DIODE GEN PURP 400V 60A TO3P |
|
IMBD4448-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 75V 150MA SOT23 |
|
PMEG040V050EPDZNexperia |
DIODE SCHOTTKY 40V 5A CFP15 |
|
S1BTRSMC Diode Solutions |
DIODE GEN PURP 100V 1A SMA |
|
NTE6075NTE Electronics, Inc. |
R-200 PRV 85A ANODE CASE |
|
S3JSMBDiotec Semiconductor |
DIODE STD SMB 600V 3A |
|
P2500M A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1000V 25A P2500 |
|
CUS551V30,H3FToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 500MA USC |
|
NSVR0230M2T5GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOD723 |
|
SD0603S040S0R2Elco (AVX) |
DIODE SCHOTTKY 40V 200MA 0603 |
|
LS4448GS08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 300MA SOD80 |
|
VF20120SG-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20A 120V ITO220AB |
|
BAT42WS-E3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD323 |