







DIODE SCHOTTKY 30V 1.1A DO41
RECT BRIDGE 1600V 50A MT35-A
IC OFFLINE SWIT PROG OVP TO220
IC EEPROM 256KBIT I2C 1MHZ 8UDFN
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 30 V |
| Current - Average Rectified (Io): | 1.1A |
| Voltage - Forward (Vf) (Max) @ If: | 710 mV @ 2 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 1 mA @ 30 V |
| Capacitance @ Vr, F: | 55pF @ 5V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | DO-204AL, DO-41, Axial |
| Supplier Device Package: | DO-41 |
| Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
MBRB1045-E3/81Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 10A TO263AB |
|
|
VS-1N3767Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 900V 35A DO203AB |
|
|
RFUH25TB3SNZC9ROHM Semiconductor |
RFUH25TB3SNZ IS AN ULTRA LOW SWI |
|
|
FESF8HT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 8A ITO220AC |
|
|
S1.5G-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
|
GP2D006A065CSemiQ |
DIODE SCHOTTKY 650V 6A TO252-2 |
|
|
IDW30E60FKSA1Rochester Electronics |
IDW30E60 - SILICON POWER DIODE |
|
|
SK83C V6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 8A 30V DO-214AB |
|
|
UF4006 R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A DO204AL |
|
|
MUR4L40HR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 4A DO201AD |
|
|
BAW62,143Rochester Electronics |
RECTIFIER DIODE |
|
|
1SS355-F2-0000HF |
DIODE GEN PURP 80V 150MA SOD323 |
|
|
1N4003GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 1A DO41 |