DIODE GEN PURP 75V 200MA DO213AA
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 75 V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 50 mA |
Speed: | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): | 20 ns |
Current - Reverse Leakage @ Vr: | 500 nA @ 75 V |
Capacitance @ Vr, F: | 4pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AA |
Supplier Device Package: | DO-213AA |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
EGL41G-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
SS1H15LW RVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 1A SOD123W |
|
MMBD6050-G3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 70V 200MA SOT23 |
|
BA158GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
NTE552-10NTE Electronics, Inc. |
10PACK OF NTE552 |
|
SS16-LTPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 1A 60V SMA |
|
SF42G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 4A DO201AD |
|
FESB16GT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 16A TO263AB |
|
JAN1N5551Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 3A AXIAL |
|
CTS05S30,L3FToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 500MA CST2 |
|
UH3BHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
|
STTH6006WSTMicroelectronics |
DIODE GEN PURP 600V 60A DO247 |
|
RGP15B-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1.5A DO204AC |