DIODE SCHOTTKY 600V 6A TO220-2-1
NOW NEXPERIA 74LVC2G00GF - NAND
Type | Description |
---|---|
Series: | CoolSiC™+ |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 6A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 2.3 V @ 6 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 50 µA @ 600 V |
Capacitance @ Vr, F: | 130pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | PG-TO220-2-1 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
SK39BHM4GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 3A DO214AA |
![]() |
S5DC-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 200V 5A SMC |
![]() |
STF15200SMC Diode Solutions |
DIODE SCHOTTKY 200V ITO220AC |
![]() |
FFM1800WRectron USA |
DIODE GEN PURP 1800V 500MA SMX |
![]() |
BYV25G-600,127Rochester Electronics |
NOW WEEN - BYV25G-600 - ULTRAFAS |
![]() |
BAT43WS-G3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD323 |
![]() |
NXPSC066506QWeEn Semiconductors Co., Ltd |
DIODE SCHOTTKY 650V 6A TO220AC |
![]() |
DSA75-18BWickmann / Littelfuse |
DIODE AVALANCHE 1.8KV 110A DO203 |
![]() |
RS3KB-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 800V 3A SMB |
![]() |
HS2GA M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1.5A DO214AC |
![]() |
AU2PKHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1.3A TO277A |
![]() |
1N6263W-7-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 60V 15MA SOD123 |
![]() |
SS22M RSGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 2A MICRO SMA |