RES 35.7K OHM 0.1% 1/2W 1210
RELAY GEN PURPOSE 4PDT 3A 120V
DIODE GEN PURP 800V 40A DO203AB
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 40A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 125 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 9 mA @ 800 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-203AB |
Operating Temperature - Junction: | -65°C ~ 190°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-86HFR100Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 85A DO203AB |
|
UG4C-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 4A DO201AD |
|
SF4005-TAPVishay General Semiconductor – Diodes Division |
DIODE AVAL 1A 600V SOD-57 |
|
VS-85HFL40S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 85A DO203AB |
|
1N5822USRoving Networks / Microchip Technology |
DIODE SCHOTTKY 40V 3A B-MELF |
|
NTE6115NTE Electronics, Inc. |
R-1200PRV 1200A |
|
RS07K-GS18Vishay General Semiconductor – Diodes Division |
DIODE GP 800V 500MA DO219AB |
|
SS1H10LW RVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 1A SOD123W |
|
HER156G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1.5A DO204AC |
|
SS2PH6-M3/84AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 2A DO220AA |
|
VBT3045BP-E3/8WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 30A TO263AB |
|
BY134-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
RS3G-E3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |