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SE10FJHM3/I

SE10FJHM3/I

DIODE GEN PURP 600V 1A DO219AB

SE10FJHM3/I

SE10FJHM3/I

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Part No :

SE10FJHM3/I

Manufacturer
Vishay General Semiconductor – Diodes Division
Description
DIODE GEN PURP 600V 1A DO219AB
Catalog
Diodes - Rectifiers - Single
Availability
25965 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
SE10FJHM3/I PDF
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):780 ns
Current - Reverse Leakage @ Vr:5 µA @ 600 V
Capacitance @ Vr, F:7.5pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-219AB
Supplier Device Package:DO-219AB (SMF)
Operating Temperature - Junction:-55°C ~ 175°C
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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