DIODE GEN PURP 100V 2A DO214AA
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 930 mV @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 25 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 50 V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
S3D V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AB |
![]() |
AS4PGHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 2.4A TO277A |
![]() |
PMEG3050BEP,115Nexperia |
DIODE SCHOTTKY 30V 5A SOD128 |
![]() |
S1A R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A DO214AC |
![]() |
VS-T20HF220Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2.2KV 20A D-55 |
![]() |
NTE6111NTE Electronics, Inc. |
R-600PRV 1100A |
![]() |
VS-60EPU06HN3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
![]() |
BY228-15TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1.2KV 3A SOD64 |
![]() |
FR157GTASMC Diode Solutions |
DIODE GPP 1KV 1.5A DO15 |
![]() |
UGF8J C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 8A ITO220AC |
![]() |
2A02GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO204AC |
![]() |
VS-70HF140Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.4KV 70A DO203AB |
![]() |
PMEG2005AESF315Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |