DIODE GEN PURP 900V 1A DO204AL
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 900 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 900 V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N5811C.TRSemtech |
DIODE GEN PURP 150V 6A AXIAL |
|
S1MLS RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1KV 1.2A SOD123HE |
|
SR310HA0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 3A DO201AD |
|
CGRA4006-GComchip Technology |
DIODE GEN PURP 800V 1A DO214AC |
|
S8GC R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 8A DO214AB |
|
SGL41-30-E3/96Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 1A DO213AB |
|
VS-8ETL06S-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A D2PAK |
|
DST860S-AWickmann / Littelfuse |
DIODE SCHOTTKY 60V 8A TO277B |
|
1N4007-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
|
CMR1U-01M TR13 PBFREECentral Semiconductor |
DIODE GEN PURP 100V 1A SMA |
|
DNA30EM2200PZ-TUBWickmann / Littelfuse |
POWER DIODE DISCRETES-RECTIFIER |
|
ES1AHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO214AC |
|
TSSA3U45 R3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 45V 3A DO214AC |