DIODE STD D8X7.5 400V 20A
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 20 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5 µs |
Current - Reverse Leakage @ Vr: | 10 µA @ 400 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | P600, Axial |
Supplier Device Package: | P600 |
Operating Temperature - Junction: | -50°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-80PFR80WVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 80A DO203AB |
|
S3B-M3/57TVishay General Semiconductor – Diodes Division |
DIODE GPP 3A 100V DO-214AB |
|
SS12-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 1A DO214AC |
|
1N3957GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
|
BYWF29-50HE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 8A ITO220AC |
|
UFS580JE3/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 800V 5A DO214AB |
|
AR1PD-M3/85AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1A DO220AA |
|
BAS40-00-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 200MA SOT23 |
|
SS36HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 3A DO214AB |
|
CDBF40-HFComchip Technology |
DIODE SCHOTTKY 40V 200MA 1005 |
|
1N6479HE3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
|
1N4150 TR PBFREECentral Semiconductor |
DIODE GEN PURP 50V 200MA DO35 |
|
SD101A-TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 30MA DO35 |