DIODE GEN PURP 400V 800MA AXIAL
Type | Description |
---|---|
Series: | - |
Package: | Cut Tape (CT)Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 800mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 800 mA |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 400 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 400 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RB068L150TE25ROHM Semiconductor |
DIODE SCHOTTKY 150V 2A PMDS |
|
MBRH24080RGeneSiC Semiconductor |
DIODE SCHOTTKY 80V 240A D67 |
|
SMBT1109-1LT1GRochester Electronics |
SS SOT23 GP XSTR SPCL TR |
|
1N4007RLGRochester Electronics |
STANDARD RECTIFIER, 1000 V, 1.0 |
|
BYT56B-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 100V 3A SOD64 |
|
S4B V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 4A DO214AB |
|
BYW29-200-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO220AC |
|
VS-20ETF12SLHM3Vishay General Semiconductor – Diodes Division |
DIODES - D2PAK-E3 |
|
VS-10BQ015-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 15V 1A DO214AA |
|
MA4L11100APanasonic |
DIODE GEN PURP 80V LEADLESS |
|
B1100Q-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 100V 1A SMA |
|
SS16L RQGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 1A SUB SMA |
|
S1MSWF-7Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 1A SOD123F |