DIODE GEN PURP 800V 12A DO214AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 12A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 12 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 1 µA @ 800 V |
Capacitance @ Vr, F: | 78pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BY448TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1500V 2A SOD57 |
|
GL34B-E3/98Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 500MA DO213 |
|
NTE6045NTE Electronics, Inc. |
R-1KV PRV 60A ANODE CASE |
|
VS-150EBU04HF4Vishay General Semiconductor – Diodes Division |
DIODE GP 400V 150A POWERTAB |
|
V3FM10-M3/HVishay General Semiconductor – Diodes Division |
3A,100V,SMF,TRENCH SKY RECT. |
|
CGRB301-GComchip Technology |
DIODE GEN PURP 50V 3A DO214AA |
|
1N5817-E3/73Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 1A DO204AL |
|
SE20AFDHM3/6AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1.3A DO221AC |
|
GF1D-E3/67AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214BA |
|
S1J-Q-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
SS115LSHRVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 1A SOD123HE |
|
HS3K V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO214AB |
|
VS-8EWS08STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 8A D-PAK |