50NS 1A 100V HIGH EFFICIENT RECO
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 1A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 950 mV @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 100 V |
Capacitance @ Vr, F: | 11pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123F |
Supplier Device Package: | SOD-123FL |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N4249NTE Electronics, Inc. |
R-SI 1000V 1A |
|
S4PJHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 4A TO277A |
|
1F14Rectron USA |
DIODE GEN PURP 1400V 500MA R1 |
|
FR2XSMADiotec Semiconductor |
DIODE FR SMA 1800V 2A |
|
V8PM10S-M3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 8A TO277A |
|
P2000JDiotec Semiconductor |
DIODE STD D8X7.5 600V 20A |
|
AU3PM-M3/87AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 1.4A TO277 |
|
VS-8EWH02FNTRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A D-PAK |
|
GL34GHE3/98Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 500MA DO213 |
|
VS-SD603C16S15CVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 600A B-43 |
|
BYW80-200GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 8A TO220-2 |
|
B1100BQ-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 100V 1A SMB |
|
1N4001-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 50V 1A DO41 |