CAP CER 430PF 50V C0G/NP0 0805
DIODE GEN PURP 200V 6A P600
Type | Description |
---|---|
Series: | - |
Package: | Cut Tape (CT)Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 900 mV @ 6 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.5 µs |
Current - Reverse Leakage @ Vr: | 5 µA @ 200 V |
Capacitance @ Vr, F: | 150pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | P600, Axial |
Supplier Device Package: | P600 |
Operating Temperature - Junction: | -50°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AU1PD-M3/84AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1A DO220AA |
|
SBT1020Diotec Semiconductor |
SCHOTTKY DIODE, TO-220AC, 20V, 1 |
|
FR606GTASMC Diode Solutions |
DIODE GPP 800V 6A R-6 |
|
RB162M-30TRROHM Semiconductor |
DIODE SCHOTTKY 30V 1A PMDU |
|
RS1MSWFQ-7Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 1A SOD123F |
|
BAS21-G3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 200MA SOT23 |
|
S2KFS M3GTSC (Taiwan Semiconductor) |
2A, 800V, STANDARD RECOVERY RECT |
|
1N5397NTE Electronics, Inc. |
R-SI 600V 1.5A |
|
ES3J-F1-3000HF |
DIODE GEN PURP 600V 3A DO214AB |
|
F1857D1200Sensata Technologies – Crydom |
DIODE GEN PURP 1.2KV 55A MODULE |
|
ZLLS2000QTAZetex Semiconductors (Diodes Inc.) |
SCHOTTKY RECTIFIER SOT26 |
|
XBS304S19R-GTorex Semiconductor Ltd. |
DIODE SCHOTTKY 40V 3A SMA |
|
B240A-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 2A DO214AC |