DIODE GEN PURP 200V 1A DO220AA
CMC 7MH 2.8A 2LN TH
Type | Description |
---|---|
Series: | eSMP® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.8 µs |
Current - Reverse Leakage @ Vr: | 1 µA @ 200 V |
Capacitance @ Vr, F: | 6pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-220AA |
Supplier Device Package: | DO-220AA (SMP) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DSS13UTRSMC Diode Solutions |
SCHOTTKY 30V SOD-123FL |
|
JANTXV1N4249Roving Networks / Microchip Technology |
DIODE GEN PURP 1KV 1A AXIAL |
|
STTH1R04USTMicroelectronics |
DIODE GEN PURP 400V 1A SMB |
|
MBRD5200TRSMC Diode Solutions |
DIODE SCHOTTKY 200V 5A DPAK |
|
RSFDLHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 500MA SUBSMA |
|
SE12DBHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3.2A TO263AC |
|
VS-12FR60Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
|
RS2JAL M3GTSC (Taiwan Semiconductor) |
250NS, 2A, 600V, FAST RECOVERY R |
|
ES1GR,115Rochester Electronics |
ES1GR - 400V, 1A HYPERFAST SWITC |
|
DAN217FHT146ROHM Semiconductor |
DIODE SWITCHING 80V 0.3A 3-PIN. |
|
MPG06MHE3_A/100Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A MPG06 |
|
VS-300UR30AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 300A DO205AB |
|
1N5400-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 3A DO201AD |