DIODE GP 1.2KV 600A POWRBLOK
STEP-UP DC/DC CONVERTER FOR MEDI
CAPACITIVE SEN 8MM PNP
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 600A |
Voltage - Forward (Vf) (Max) @ If: | 1.19 V @ 1800 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 40 mA @ 1200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis Mount |
Package / Case: | POW-R-BLOK™ Module |
Supplier Device Package: | POW-R-BLOK™ Module |
Operating Temperature - Junction: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N3613GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
MURS260HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
|
SF15G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 1A DO204AL |
|
1N4937GPE-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
SDM10K45-7-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 45V 100MA SOD323 |
|
VS-10TQ035SHM3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 10A D2PAK |
|
UH8JT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
|
VS-1N3881RVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 6A DO203AA |
|
RB150M-30TRROHM Semiconductor |
DIODE SCHOTTKY 30V 1.5A PMDS |
|
VS-30WQ06FNTRRHM3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY DPAK |
|
S1MLHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1000V 1A SUB SMA |
|
VS-6EWH06FNTR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A DPAK |
|
AU2PK-M3/87AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1.3A TO277A |