THYRISTOR 200V 150A 6SMD GW
DIODE SCHOTTKY 650V 6A DPAK
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 1.75 V @ 6 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 60 µA @ 650 V |
Capacitance @ Vr, F: | 300pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Operating Temperature - Junction: | -40°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
P600J-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A P600 |
|
SSA23LHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 2A DO214AC |
|
SDT8A120P5Q-13DZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 120V 8A POWERDI5 |
|
STTH802FPSTMicroelectronics |
DIODE GEN PURP 200V 8A TO220FP |
|
SRA8150 C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 8A TO220AC |
|
ACGRBT203-HFComchip Technology |
DIODE GEN PURP 600V 2A 2114 |
|
HER102G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO204AL |
|
VS-100BGQ030HF4Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 100A POWERTAB |
|
ES3FHR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 3A DO214AB |
|
B260Q-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 60V 2A SMB |
|
RFUH10TF6SROHM Semiconductor |
DIODE GEN PURP 600V 10A TO220NFM |
|
SURS8120T3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 1A SMB |
|
VS-SD700C36LVishay General Semiconductor – Diodes Division |
DIODE GP 3.6KV 700A DO200AB |