







MEMS OSC XO 12.2880MHZ LVCMOS LV
MEMS OSC XO 25.000625MHZ LVCMOS
DIODE GEN PURP 600V 2A SMB
USS004B2 = STRIP CON
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 600 V |
| Current - Average Rectified (Io): | 2A |
| Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 2 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 100 ns |
| Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
| Capacitance @ Vr, F: | 28pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AA, SMB |
| Supplier Device Package: | SMB |
| Operating Temperature - Junction: | -60°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
BYP25K6Diotec Semiconductor |
DIODE STD D13X10.7W 600V 25A |
|
|
RS07G-GS18Vishay General Semiconductor – Diodes Division |
DIODE GP 400V 500MA DO219AB |
|
|
S12JCHR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 12A DO214AB |
|
|
S5MDiotec Semiconductor |
DIODE STD SMC 1000V 8A |
|
|
V30DM120-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 120V 6A TO263AC |
|
|
SS110A-F1-0000HF |
DIODE SCHOTTKY 100V 1A DO214AC |
|
|
S3M-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE GPP 3A 1000V DO-214AB |
|
|
V35PW15HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 35A SLIMDPAK |
|
|
ES3G V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO214AB |
|
|
ES2F-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 2A DO214AA |
|
|
S2M/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1.5A DO214 |
|
|
UJ3D1210TSUnitedSiC |
1200V 10A SIC SCHOTTKY DIODE G3, |
|
|
VS-1N3209RVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 15A DO203AB |