Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 10 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 30 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 400 V |
Capacitance @ Vr, F: | 140pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277-3 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-60EPS12-M3Vishay General Semiconductor – Diodes Division |
DIODE 1.2KV 60A TO247AC |
|
MBR15200SMC Diode Solutions |
DIODE SCHOTTKY 200V TO220AC |
|
65DN06ELEMPRXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 600V 8470A |
|
SJPD-L5VSanken Electric Co., Ltd. |
DIODE GEN PURP 500V 3A SJP |
|
1N4002GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
|
SF1200-TAPVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 1A SOD57 |
|
1N5818-E3/53Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 1A DO204AL |
|
S1KLSHRVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1.2A SOD123 |
|
RB400DFHT146ROHM Semiconductor |
DIODE (RECTIFIER FRD) 40V-VRM 40 |
|
IDK20G120C5XTMA1IR (Infineon Technologies) |
SIC DISCRETE |
|
BAS521,135Nexperia |
DIODE GEN PURP 300V 250MA SOD523 |
|
MURS340T3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 400V 3A SMC |
|
S3ATRSMC Diode Solutions |
DIODE GEN PURP 50V 3A SMC |