DIODE GEN PURP 2.2KV 30A TO263
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 2200 V |
Current - Average Rectified (Io): | 30A |
Voltage - Forward (Vf) (Max) @ If: | 1.26 V @ 30 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 40 µA @ 2200 V |
Capacitance @ Vr, F: | 7pF @ 700V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-15ETL06-M3Vishay General Semiconductor – Diodes Division |
DIODE FRED 600V 15A TO220AC |
|
S4G V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 4A DO214AB |
|
MBRS360BT3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 60V 3A SMB |
|
BAS21HT1Rochester Electronics |
DIODE GEN PURP 250V 200MA SOD323 |
|
1N485BSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 200MA DO35 |
|
STPSC806G-TRSTMicroelectronics |
DIODE SCHOTTKY 600V 8A D2PAK |
|
FFSH20120ADN-F085Sanyo Semiconductor/ON Semiconductor |
1200V 20A AUTO SIC SBD |
|
S1PGHM3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO220AA |
|
BYW83TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
|
SB840Diotec Semiconductor |
SCHOTTKY D5.4X7.5 40V 8A |
|
1N5061 TR PBFREECentral Semiconductor |
DIODE GEN PURP 600V 1A GPR-1A |
|
S1K M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A DO214AC |
|
MUR1100EGSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 1000V 1A AXIAL |