DIODE GEN PURP 100V 3.2A TO263AC
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, eSMP® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 3.2A |
Voltage - Forward (Vf) (Max) @ If: | 1.15 V @ 12 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3 µs |
Current - Reverse Leakage @ Vr: | 20 µA @ 100 V |
Capacitance @ Vr, F: | 90pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab) Variant |
Supplier Device Package: | TO-263AC (SMPD) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VB20150S-E3/8WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 20A TO263AB |
|
NTE6106NTE Electronics, Inc. |
R-1600 PRV 450A CATH CASE |
|
SDUR530SMC Diode Solutions |
DIODE GEN PURP 300V TO220AC |
|
VS-41HF60Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 40A DO203AB |
|
S5K-M3/57TVishay General Semiconductor – Diodes Division |
DIODE GPP 5A 800V DO-214AB |
|
HS2B R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO214AA |
|
BAS16D-E3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 75V 250MA SOD123 |
|
VS-10ETS08STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 10A D2PAK |
|
US1A-M3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO214AC |
|
P2000DDiotec Semiconductor |
DIODE STD D8X7.5 200V 20A |
|
BY203-16STRVishay General Semiconductor – Diodes Division |
DIODE AVALANCH 1.2KV 250MA SOD57 |
|
JANTXV1N3595-1Roving Networks / Microchip Technology |
DIODE GEN PURP 125V 150MA DO204 |
|
SF11GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A DO204AL |