Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 90 V |
Current - Average Rectified (Io): | 500mA |
Voltage - Forward (Vf) (Max) @ If: | 850 mV @ 500 mA |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 100 µA @ 90 V |
Capacitance @ Vr, F: | 65pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BAL99E6327HTSA1Rochester Electronics |
SILICON SWITCHING DIODE |
|
SF48G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 4A DO201AD |
|
SBR8M100P5-13DZetex Semiconductors (Diodes Inc.) |
DIODE SBR 100V 8A POWERDI5 |
|
ER1Q-LTPMicro Commercial Components (MCC) |
1ASUPERFASTRECOVERYSILICONRECTIF |
|
US1D-E3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
MBR440MFST1GRochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 4A, 4 |
|
1N4448 A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 150MA DO35 |
|
RS1KHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO214AC |
|
VS-50WQ03FNTRHM3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 5.5A DPAK |
|
RB751S40T5GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 40V 30MA SOD523 |
|
RGP10B-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
|
VS-6F100MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 6A DO203AA |
|
FR202G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 2A DO204AC |