DIODE AVALANCH 1KV 1.6A TO277A
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, eSMP® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 1.6A |
Voltage - Forward (Vf) (Max) @ If: | 1.9 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 120 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 800 V |
Capacitance @ Vr, F: | 34pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BYM12-200-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
|
RSX101VAM30TRROHM Semiconductor |
DIODE SCHOTTKY 30V 1A TUMD2M |
|
PNS40010ER,115Nexperia |
DIODE GEN PURP 400V 1A SOD123W |
|
GL41D-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
|
SK310BHR5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 3A DO214AA |
|
GP10V-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.4KV 1A DO204AL |
|
PMEG2010ER,115Nexperia |
DIODE SCHOTTKY 20V 1A CFP3 |
|
ER2A-LTPMicro Commercial Components (MCC) |
DIODE GEN PURP 50V 2A DO214AA |
|
1PS79SB31,115Nexperia |
DIODE SCHOTTKY 30V 200MA SOD523 |
|
JAN1N5616USRoving Networks / Microchip Technology |
DIODE GEN PURP 400V 1A D5A |
|
RB520CM-30T2RROHM Semiconductor |
DIODE SCHOTTKY 30V 100MA VMN2M |
|
SBR130S3-7Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 30V 1A SOD323 |
|
CEFM104-GComchip Technology |
DIODE GEN PURP 400V 1A MINISMA |