CAP CER 0.33UF 10V U2J 1210
DIODE GEN PURP 600V 8A TO220-2
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 2.1 V @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 100 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-SD2500C16KVishay General Semiconductor – Diodes Division |
DIODE GP 1.6KV 3000A DO200AC |
|
VS-6ESH01-M3/86AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 6A TO277A |
|
JANTX1N4153-1Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 150MA DO204AH |
|
ER3K-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 800V 3A DO214AB |
|
VS-15AWL06FNTRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A D-PAK |
|
MBRAF3200T3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 200V 3A SMA-FL |
|
SB350-E3/54Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 3A DO201AD |
|
NSR0240V2T5GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 40V 250MA SOD523 |
|
SS2P5-M3/84AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 2A DO220AA |
|
SRAS20150HMNGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 20A TO263AB |
|
S3AB R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 3A DO214AA |
|
MBR20100SMC Diode Solutions |
DIODE SCHOTTKY 100V TO220AC |
|
FES6GRochester Electronics |
RECTIFIER DIODE, 6A, 400V, TO-27 |