DIODE AVALANCHE 200V 1.5A
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.25 V @ 1.5 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 140 ns |
Current - Reverse Leakage @ Vr: | 1 µA @ 200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-30APF12-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC |
|
UGF8FTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 8A ITO220AC |
|
STPS340USTMicroelectronics |
DIODE SCHOTTKY 40V 3A SMB |
|
AU1PMHM3/84AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1000V 1A DO220AA |
|
S2J M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 2A DO214AA |
|
VS-30WQ04FNTRHM3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY DPAK |
|
RS3D R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AB |
|
GPP10B-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
|
BAS70WX-TPMicro Commercial Components (MCC) |
200MWSURFACEMOUNTSCHOTTKYBARRIER |
|
SS110L RQGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 1A SUB SMA |
|
SF21G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 2A DO204AC |
|
CDBA240LL-GComchip Technology |
DIODE SCHOTTKY 40V 2A DO214AC |
|
SSA23L-M3/61TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 2A 30V DO-214AC |