AUTOMOTIVE 650 V POWER SCHOTTKY
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 100 µA @ 650 V |
Capacitance @ Vr, F: | 480pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK |
Operating Temperature - Junction: | -40°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ES1G-F1-0000HF |
DIODE GEN PURP 400V 1A DO214AC |
|
CDBQR00340-HFComchip Technology |
DIODE SCHOTTKY 40V 30MA 0402 |
|
BAT43W-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 30V 200MA SOD123 |
|
CD411699DPowerex, Inc. |
DIODE MOD PWR BLOK 100A 1600V |
|
JANTX1N5190Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 3A AXIAL |
|
S1DL RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A SUB SMA |
|
66PQ040Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V TO247AC |
|
MR752Solid State Inc. |
RECT 200 V 6 AMPS |
|
VS-10BQ030-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 1A DO214AA |
|
MBRB1060HE3_A/PVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 10A TO263AB |
|
RB162MM-60TFTRROHM Semiconductor |
RB162MM-60TF IS THE HIGH RELIABI |
|
1N4003GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO204AL |
|
MURS480ET3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 800V 4A SMC |