NOW WEEN - BYC5DX-500 - HYPERFAS
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 500 V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 2 V @ 5 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 16 ns |
Current - Reverse Leakage @ Vr: | 40 µA @ 500 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220FP |
Operating Temperature - Junction: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SK36BHR5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 3A DO214AA |
|
RS1JDF-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 1A DFLAT |
|
CMDD6263 TR PBFREECentral Semiconductor |
DIODE SCHOTTKY 70V 15MA SOD323 |
|
SSB44HR5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 4A DO214AA |
|
DSEI30-12AWickmann / Littelfuse |
DIODE GEN PURP 1.2KV 26A TO247AD |
|
VS-6FLR100S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 6A DO203AA |
|
NTE5986NTE Electronics, Inc. |
R-200 PRV 40A CATH CASE |
|
VS-ETH1506STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO263AB |
|
S12JC V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 12A DO214AB |
|
VI20150SG-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20A 150V TO-262AA |
|
VS-8EVL06-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURPOSE 600V SLIMDPAK |
|
S1JL RUGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
75HQ045Roving Networks / Microchip Technology |
SCHOTTKY DIODE |