Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 150mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 450 mV @ 10 mA |
Speed: | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 µA @ 75 V |
Capacitance @ Vr, F: | 10pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | 125°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BAT64E6327HTSA1IR (Infineon Technologies) |
DIODE SCHOTTKY 40V 120MA SOT23-3 |
|
RL1N1800FRectron USA |
DIODE GEN PURP 1800V 1A A405 |
|
VS-305UR160Vishay General Semiconductor – Diodes Division |
DIODE GP 1.6KV 330A DO205AB |
|
SE50PAD-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 5A DO221BC |
|
1N6621Roving Networks / Microchip Technology |
DIODE GEN PURP 440V 1.2A AXIAL |
|
KYW25K05Diotec Semiconductor |
DIODE STD D12.77X6.6W 50V 25A |
|
MUR5010RGeneSiC Semiconductor |
DIODE GEN PURP REV 100V 50A DO5 |
|
VS-6EWH06FNTRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A D-PAK |
|
LS101C-GS08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 30MA SOD80 |
|
NTE6120NTE Electronics, Inc. |
R-1600V 500A |
|
VS-6TQ040S-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 6A TO263AB |
|
AR1PGHM3/84AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1A DO220AA |
|
SS16M RSGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 1A MICRO SMA |