DIODE GEN PURP 600V 8A TO262
Type | Description |
---|---|
Series: | FRED Pt® |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.05 V @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 250 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262AA |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STTH4R02USTMicroelectronics |
DIODE GEN PURP 200V 4A SMB |
|
SE10PGHM3/84AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO220AA |
|
UFS330JE3/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 300V 3A DO214AB |
|
FML-G14SSanken Electric Co., Ltd. |
DIODE GEN PURP 400V 5A TO220F-2L |
|
FR307G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 3A DO201AD |
|
BAT54WS-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD323 |
|
USB260-M3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
|
SS3P6LHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 3A TO277A |
|
SS23M RSGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 2A MICRO SMA |
|
CURN105-HFComchip Technology |
DIODE GEN PURP 1KV 1A 1206 |
|
1N4007 TRCentral Semiconductor |
DIODE GEN PURP 1KV 1A DO41 |
|
GP10N-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.1KV 1A DO204AL |
|
VS-41HF100Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 40A DO203AB |