DIODE GEN PURP 400V 2A DO214AA
DIN41612, MALE, HALF R TYPE, 48
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.15 V @ 2 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5 µs |
Current - Reverse Leakage @ Vr: | 1 µA @ 400 V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N5819-GComchip Technology |
DIODE SCHOTTKY 40V 1A DO41 |
|
AS3PD-M3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2.1A TO277A |
|
BAT54-02V-V-G-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD523 |
|
1PS79SB70,315Nexperia |
DIODE SCHOTTKY 70V 70MA SOD523 |
|
BYV28-200-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 3.5A SOD64 |
|
S4PJ-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 4A TO277A |
|
1N4003-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
MBR1660-E3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 16A TO220AB |
|
PMEG4020EPA,115Rochester Electronics |
NOW NEXPERIA PMEG4020EPA - RECTI |
|
BYC10-600,127WeEn Semiconductors Co., Ltd |
DIODE GEN PURP 500V 10A TO220AC |
|
RSFALHRQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 500MA SUB SMA |
|
CDBU00340-HFComchip Technology |
DIODE SCHOTTKY 40V 30MA 0603 |
|
FFPF04U150STURochester Electronics |
RECTIFIER DIODE |