DIODE GEN PURP 150V 16A TO263AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150 V |
Current - Average Rectified (Io): | 16A |
Voltage - Forward (Vf) (Max) @ If: | 975 mV @ 16 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 150 V |
Capacitance @ Vr, F: | 175pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HER106G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AL |
|
S40KRGeneSiC Semiconductor |
DIODE GEN PURP REV 800V 40A DO5 |
|
BYW27-200-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
BYW80-200Rochester Electronics |
RECTIFIER DIODE |
|
CMPD4448 BK PBFREECentral Semiconductor |
DIODE GEN PURP 75V 250MA SOT23 |
|
1N4148WS-G RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 75V 150MA SOD323 |
|
BYWB29-100HE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A TO263AB |
|
SS25LHR3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 2A SUB SMA |
|
BYG23M R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1.5A DO214AC |
|
CMR1U-04M TR13 PBFREECentral Semiconductor |
DIODE GEN PURP 400V 1A SMA |
|
VF20120SG-E3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 120V 20A ITO220AB |
|
SE20AFB-M3/6AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1.3A DO221AC |
|
HERAF1008G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 10A ITO220AC |