DIODE SCHOTTKY 60V 1A SOD123W
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 60 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 700 mV @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 100 µA @ 60 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123W |
Supplier Device Package: | SOD-123W |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SS29-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 1.5A 90V DO-214AA |
|
SR206 R0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 2A DO204AC |
|
MBR440MFST3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 40V 4A 5DFN |
|
SB850Diotec Semiconductor |
SCHOTTKY DIODE, D5.4X7.5, 50V, 8 |
|
SS8P2L-M3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 8A TO277A |
|
VS-10ETF12STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 10A D2PAK |
|
VS-1N1187AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 40A DO203AB |
|
JAN1N5802URSRoving Networks / Microchip Technology |
DIODE GEN PURP 50V 1A APKG |
|
BYT54M-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1KV 1.25A SOD57 |
|
VB20150S-M3/8WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20A 150V TO-263AB |
|
1N4004G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO204AL |
|
BYW27-200GP-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
EAL1KDiotec Semiconductor |
DIODE SFR DO-213AA 800V 1A |