DIODE GEN PURP 600V 2.9A TO277A
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, eSMP® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 2.9A |
Voltage - Forward (Vf) (Max) @ If: | 1.05 V @ 7 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.6 µs |
Current - Reverse Leakage @ Vr: | 20 µA @ 600 V |
Capacitance @ Vr, F: | 76pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N3671ARGeneSiC Semiconductor |
DIODE GEN PURP REV 800V 12A DO4 |
|
S3J V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO214AB |
|
V12P15HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 12A TO277A |
|
MUR240GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 400V 2A AXIAL |
|
NRVTS8120EMFST3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 120V 8A 5DFN |
|
STTH6010WSTMicroelectronics |
DIODE GEN PURP 1KV 60A DO247 |
|
LXA03B600Power Integrations |
DIODE GEN PURP 600V 3A TO263AB |
|
ES1JFLSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 1A SOD123F |
|
GPP20J-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 2A DO204AC |
|
VS-STPS20L15GL-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 15V 20A TO263AB |
|
CUS10S30,H3FToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 30V 1A USC |
|
SF2L6G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 2A DO204AC |
|
SK53CHR7GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 5A DO214AB |