DIODE GEN PURP 600V 3A DO214AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -50°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-20ETF04STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 20A TO263AB |
|
1N5616USRoving Networks / Microchip Technology |
DIODE GEN PURP 400V 1A D5A |
|
SS215L RUGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 2A SUB SMA |
|
ES2G-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 400V 2A SMB |
|
AR4PKHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1.8A TO277A |
|
UG1A-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
|
AS1PGHM3/85AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.5A DO220 |
|
ES1AL RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A SUB SMA |
|
CDBT0540-GComchip Technology |
DIODE SCHOTTKY 40V 500MA SOT23 |
|
SK13-TP (SMB5818)Micro Commercial Components (MCC) |
DIODE SCHOTTKY 30V 1A DO214AA |
|
ACEFC304-HFComchip Technology |
DIODE GEN PURP 200V 3A DO214AB |
|
VS-15ETH03SHM3Vishay General Semiconductor – Diodes Division |
RECTIFIER HYPERFAST 15A TO-263AB |
|
SD103CWS-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 350MA 20V SOD323 |