Type | Description |
---|---|
Series: | - |
Package: | Bag |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 3 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 µA @ 1000 V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BAS16LT1GSanyo Semiconductor/ON Semiconductor |
DIODE GP 100V 200MA SOT23-3 |
|
NTE517NTE Electronics, Inc. |
D-15KV FOR MICROWAVE OVEN |
|
BAT54-G3-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOT23 |
|
VS-8ETU04STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A TO262 |
|
ES1A-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO214AC |
|
PMEG2005EGWJRochester Electronics |
RECTIFIER DIODE, SCHOTTKY, 0.5A, |
|
MBRF10H100/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 10A ITO220AC |
|
MBRM120ET3Rochester Electronics |
RECTIFIER DIODE |
|
FESF16BT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 16A ITO220AC |
|
MBR1650 C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 16A TO220AC |
|
BYM12-400-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
NTE570NTE Electronics, Inc. |
D-CONTROLLED AVALANCHE |
|
DS17-12AWickmann / Littelfuse |
DIODE AVALANCHE 1.2KV 25A DO203 |