DIODE GEN PURP 400V 1A SUB SMA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.8 µs |
Current - Reverse Leakage @ Vr: | 5 µA @ 400 V |
Capacitance @ Vr, F: | 9pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N4148WS-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 75V 150MA SOD323 |
|
HS5M R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1KV 5A DO214AB |
|
1N5398GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1.5A DO204AC |
|
FM4006-WRectron USA |
DIODE GEN PURP 800V 1 A SMA |
|
NRVB30H100MFST3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 30A 5DFN |
|
UF4004-M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
1SS401(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 20V 300MA SC70 |
|
BAS581-02V-V-G-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 200MA SOD523 |
|
UF4006HA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A DO204AL |
|
RFU10TF6SROHM Semiconductor |
DIODE GEN PURP 600V 10A TO220NFM |
|
ACURB202-HFComchip Technology |
AUTOMOTIVE DIODE GEN PURP 100V 2 |
|
DSEI12-12AZ-TUBWickmann / Littelfuse |
POWER DIODE DISCRETES-FRED TO-26 |
|
UH3BHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |